Design And Simulation Noise Characteristics of AlGaN/GaN/AlGaN/GaN HEMT on SIC Substrate For Low Noise Applications

Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Noise Measurements And SIMS Characterization

Wide bandgap devices such as AlGaN/GaN High Electron Mobility Transistors (HEMT) grown on silicon carbide (SiC) substrate are investigated. Low frequency noise (LFN) measurements have been carried out to evaluate the structural perfection of dual gated HEMT devices featuring 0.25x2x75μm2 gate area: generation-recombination (GR) processes are evidenced. Two sets of GRbulges related respectively ...

Low Frequency Noise Of AlGaN/GaN HEMT Grown On Al2O3 , Si And SiC Substrates

The use of wide bandgap materials for broadcast telecommunication and defense systems allow high power, high efficiency and high integration levels of active devices thanks to their microwave electrical performances. GaN based devices have also demonstrated great potential for high frequency linear low noise applications. However, low frequency noise (LFN) performances characteristics are still...

THESIS FOR THE DEGREE OF LICENTIATE OF ENGINEERING GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design

A 3.5 GHz Low-Noise Amplifier in 0.35 μm GaN HEMT on Si-Substrate for WiMAX Applications

This paper presents an 3.5 GHz low noise amplifier that uses a two-stage configuration, using 0.35 m AlGaN/GaN HEMT on silicon substrate technology. The first stage has a cascode topology to achieve high gain, better stability and well reverse isolation. The second stage has a RC-feedback topology for wideband matching. The Tmatching network is used for broadband output matching. The results s...

On-Wafer, Cryogenic Characterization of Ultra-Low Noise HEMT Devices

Significant advances in the development of high electron-mobility field-effect transistors (HEMTs) have resulted in cryogenic, low-noise amplifiers (LNAs) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting–insulator– supercon...